PART |
Description |
Maker |
GS8161E36BD-150 GS8161E36BT-150 GS8161E36BGT-200I |
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 7.5 ns, PBGA165 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 7.5 ns, PQFP100 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 6.5 ns, PQFP100 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 6.5 ns, PBGA165 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 100万18,为512k × 36,为512k × 36 35.7同步突发静态存储器 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 7.5 ns, PBGA165 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 5.5 ns, PQFP100
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GSI Technology, Inc.
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GS880F18 GS880F36T-11I GS880F36T-14 GS880F36T-12I |
8Mb12K x 18Bit) Synchronous Burst SRAM(8M位(512K x 18位)同步静态RAM(带2位脉冲地址计数器)) 512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100 512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 14 ns, PQFP100 512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 12 ns, PQFP100 512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 12 ns, PQFP100 512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11.5 ns, PQFP100 512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100
|
GSI Technology, Inc. Molex, Inc.
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GS8324Z72C-200 GS8324Z18B GS8324Z18C-200I GS8324Z7 |
2M x 18, 1M x 36, 512K x 72 36Mb Sync NBT SRAMs 1M X 36 ZBT SRAM, 10 ns, PBGA209 2M x 18, 1M x 36, 512K x 72 36Mb Sync NBT SRAMs 512K X 72 ZBT SRAM, 7.5 ns, PBGA209 2M x 18, 1M x 36, 512K x 72 36Mb Sync NBT SRAMs 2M X 18 ZBT SRAM, 6 ns, PBGA119 2M x 18, 1M x 36, 512K x 72 36Mb Sync NBT SRAMs 1M X 36 ZBT SRAM, 8.5 ns, PBGA209 512K X 72 ZBT SRAM, 6 ns, PBGA209 14 X 22 MM, 1 MM PITCH, BGA-209 2M x 18, 1M x 36, 512K x 72 36Mb Sync NBT SRAMs 512K X 72 ZBT SRAM, 10 ns, PBGA209
|
GSI Technology, Inc.
|
GS832218B-133 GS832218B-133I GS832218B-150 GS83221 |
64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万18100万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36,为512k × 72分配36MBS /双氰胺同步突发静态存储器 DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35 (GS832218 / GS832236 / GS832272) S/DCD Sync Burst SRAMs
|
ETC Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers List of Unclassifed Man...
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GS88436B-133 GS88436B-133I GS88436B-150 GS88436B-1 |
512K x 18, 256K x 36 8Mb S/DCD Sync Burst SRAMs 512K X 18 CACHE SRAM, 8.5 ns, PBGA119
|
Electronic Theatre Controls, Inc. GSI Technology
|
IS64LV51216-12TLA3 IS64LV51216-12TA3 IS61LV51216-1 |
512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 512K X 16 STANDARD SRAM, 8 ns, PDSO44
|
Integrated Silicon Solution, Inc. 天津新技术产业园区管理委员会
|
GS816118BT-200 GS816118BT-150 GS816118BT-150I GS81 |
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
GS8160E18BGT-250IV GS8160E18BT-250IV GS8160E18BT-1 |
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
MX26LV040PC-55 MX26LV040QC-55 MX26LV040TC-55G |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 8 FLASH 3V PROM, 55 ns, PDIP32 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 8 FLASH 3V PROM, 55 ns, PQCC32 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 8 FLASH 3V PROM, 55 ns, PDSO32
|
Macronix International Co., Ltd.
|
CY7C1386C-167BZI CY7C1386C-167AI CY7C1386C-200AI C |
18-Mb (512K x 36/1M x 18) Pipelined DCD Sync SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100 18-Mb (512K x 36/1M x 18) Pipelined DCD Sync SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA119
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
GS8161E36BD-150IV GS8161E36BT-150IV GS8161E18BGT-2 |
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 7.5 ns, PBGA165 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 7.5 ns, PQFP100 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 6.5 ns, PQFP100 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 6.5 ns, PBGA165 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 6.5 ns, PQFP100 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 5.5 ns, PBGA165 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 5.5 ns, PBGA165 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 32 CACHE SRAM, 7.5 ns, PBGA165
|
GSI Technology, Inc.
|
MX26LV004BQC-55 MX26LV004BTC-55 MX26LV004TTC-70 |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 8 FLASH 3V PROM, 55 ns, PQCC32 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 8 FLASH 3V PROM, 55 ns, PDSO40 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 8 FLASH 3V PROM, 70 ns, PDSO40
|
Macronix International Co., Ltd.
|
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